ROHM power devices

ROHM power transistor

ROHM's power MOSFETs and bipolar transistors. The power MOSFET with a rated voltage of 600-800V achieves high-speed switching and low on resistance performance through the use of super junction technology, which can reduce application losses. PC、 PFC circuits for power applications such as servers, chargers, and lighting are suitable for products with low noise specifications or high-speed switch specifications. ROHM's bipolar transistor has launched a variety of packaging options, including small signal, thin, and power packaging. Low loss can be achieved through low VCE (sat), and a power bipolar with high collector current suitable for gate drive circuits of SiC, IGBT, and MOSFET has been developed.

Car MOSFET: ROHM's car MOSFET provides low on resistance products that can be quickly switched for various applications. And the packaging product lineup is rich, which can adapt to the trend of miniaturization and high current, and flexibly meet customer requirements. We will further reduce the on resistance and improve the switching speed by developing new process structures. Bipolar transistor: ROHM's transistors come in small signal, thin, high-power and other types, and are packaged in various forms to meet the needs of the times. Digital transistor: The digital transistor developed by Rohm is a commonly used built-in resistive transistor in the field of digital circuit design ROHM has ultra small surface mount packaging that meets market requirements and saves space. A diverse product line with rich resistance values.

ROHM power diode

From ultra-low IR to ultra-low VF, ROHM's power diodes have an unparalleled production capacity to meet market requirements, including a wide range of Schottky barrier diodes and fast recovery diodes that offer VF trr trade-offs suitable for various applications. Including Schottky diodes; Fast recovery diode; Rectifier diode; TVS diode; Sodium diode.

ROHM SiC power devices

Compared with traditional silicon devices, silicon carbide (SiC) devices have become feasible candidate devices for the next generation of low loss semiconductors due to their low on resistance characteristics and excellent high-temperature, high-frequency, and high-voltage performance. In addition, SiC allows designers to reduce the use of components, further reducing the complexity of the design. The low on resistance characteristics of SiC components help significantly reduce the energy consumption of equipment, thereby facilitating the design of environmentally friendly products and systems that can reduce CO2 emissions. ROHM is in an advanced position in the development of SiC power components and modules, which have achieved better energy-saving effects in many industries. Including SiC (silicon carbide) Schottky diodes; SiC (silicon carbide) MOSFET; SiC (silicon carbide) power module; SiC Schottky barrier diode Bare Die; SiC (silicon carbide) MOSFET Bare Die.

ROHM GaN power devices

Gallium nitride GaN is a compound semiconductor material used for next-generation power devices. Due to its superior performance over silicon devices, such as excellent high-frequency characteristics, it began to be adopted. Due to its higher switching characteristics and lower on resistance compared to silicon devices, GaN devices are expected to help reduce power consumption, miniaturize various power sources, and miniaturize peripheral components. Rohm has successfully increased the gate withstand voltage (rated gate source voltage) to the industry-leading 8V, making it highly suitable for power circuits in industrial equipment such as base stations and data centers, as well as IoT communication devices.

ROHM IGBT

ROHM's IGBT insulated gate bipolar transistor products have contributed to the high efficiency and energy-saving of high voltage and high current applications. Field Cut off Trench IGBT: Utilizing ROHM's trench gate and thin wafer technology, low VCE (sat) and low switching loss IGBT products have been achieved. Ignition IGBT： It is a high reliability IGBT product that combines low Vce (sat) and high avalanche resistance, suitable for vehicle ignition applications. IGBT Bare Die: GBT/FRD products help achieve high efficiency and energy savings in many high-voltage and high current applications.

ROHM Intelligent Power Module

ROHM's IPM (Intelligent Power Module) is a product that integrates driving circuits and protection functions suitable for IGBT devices. Made contributions to the efficiency and simplification of equipment design. MOS-IPM: ROHM's MOS-IPM is a high-efficiency IPM product that uses the self-produced PrestoMOS. Compared with IGBT products, it can significantly reduce the losses during stable operation of air conditioning.

IPM Loss Simulator: The loss simulator is a power loss estimation software specifically designed for ROHM IGBT IPM. The loss simulator can accurately estimate power loss, junction temperature, and shell temperature based on the customer's application task summary, thereby shortening solution design, saving time and resources. IGBT-IPM: ROHM's IGBT-IPM can provide excellent products according to the switching frequency of the application.